The Seebeck coefficient and phonon drag in silicon

Seebeck coefficient in silicon nanowire arrays

On the Interplay Between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires

Seebeck coefficient of one electron

Computational Seebeck Coefficient Measurement Simulations

We have employed finite element analysis to develop computational Seebeck coefficient metrology simulations. This approach enables a unique exploration of multiple probe arrangements and measurement techniques within the same temporal domain. To demonstrate the usefulness of this approach, we have performed these Seebeck coefficient measurement simulations to quantitatively explore perturbation...

The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process

Silicon nanowires are patterned down to 30 nm using complementary metal-oxide-semiconductor (CMOS) compatible process. The electrical conductivities of n-/p-leg nanowires are extracted with the variation of width. Using this structure, Seebeck coefficients are measured. The obtained maximum Seebeck coefficient values are 122 μV/K for p-leg and -94 μV/K for n-leg. The maximum attainable power fa...